x570 Taichi Trident Z Neo troubles : SoEvoL wrote:If I default it...

Tue, 05 Jan 2021 21:04:55 +0000

Author: muziqaz
Subject: 17713
Posted: 05 Jan 2021 at 9:04pm

SoEvoL wrote:

If I default it to auto then yes. I also tried Different speeds, I decide to just take the board and memory back and get it replaced.

At the moment it seems memory speeds above 3533Mhz on taichi with bios 3.80 and 5000 series CPU is bugged. You are lucky you can even boot with those speeds. I can't even boot with my RAM set to 3600Mhz. It works flawlessly at 3533Mhz.
Replacing board and memory will not solve anything for a moment, until Asrock and AMD get their act together and get things sorted.

Reset BIOS to factory defaults, and manually set RAM to 3533mhz, and see if it is stable.

x570 Taichi Trident Z Neo troubles : drumshot wrote:I have am ASRock...

Tue, 05 Jan 2021 21:02:05 +0000

Author: muziqaz
Subject: 17713
Posted: 05 Jan 2021 at 9:02pm

drumshot wrote:

I have am ASRock B450M with an AMD Ryzen 3 3200G that I built for my son and it keeps crashing when installing Windows 10 from USB.

I tried downgrading the BIOS from 3.70 to 3.20 but still crashing and rebooting during install.

Does anyone have any experience with resolving this issue?

More information would help.
Trident Z neo is series name, and has dozen different speed SKUs.
At what point is installation crashing? Do you have SATA HDD/SSD, if yes, do you have SATA mode set to AHCI instead of IDE?

x570 Taichi Trident Z Neo troubles : If I default it to auto then yes....

Tue, 05 Jan 2021 01:18:13 +0000

Author: SoEvoL
Subject: 17713
Posted: 05 Jan 2021 at 1:18am

If I default it to auto then yes. I also tried Different speeds, I decide to just take the board and memory back and get it replaced.

x570 Taichi Trident Z Neo troubles : Will it post without the overclock?...

Mon, 04 Jan 2021 23:11:50 +0000

Author: RLGL
Subject: 17713
Posted: 04 Jan 2021 at 11:11pm

Will it post without the overclock?

x570 Taichi Trident Z Neo troubles : I searched around for my memory...

Mon, 04 Jan 2021 11:36:49 +0000

Author: SoEvoL
Subject: 17713
Posted: 04 Jan 2021 at 11:36am

I searched around for my memory issues but I still can't figure it out. I haven't built a pc in a long time so I need some guidance as to memory overclocking. I finished this build on the 2nd since I was able to find a 3080 at Microcenter.

I tried the XMP 2.0 Profile and it won't post, it does a few cycles then powers on. I tried using Dram Calc and Thaiphoon but that didn't get me anywhere and I tried using numbers I found from other users. I probably messed something up on my end for sure. Other than the memory issue the build has been rocking and posting great numbers on 3dmark. I just want to take advantage of the 3600hz memory that I was told would work. If there's a better option I'll return it.

Thank you everyone in advance.

Hardware
X570 Taichi 3.80
Ryzen 7 5800x
GSkillz Trident Z Neo 3600hz
Corsair rm850x

MANUFACTURING DESCRIPTION
Module Manufacturer:     G.Skill
Module Part Number:     F4-3600C18-8GTZN
Module Series:     Trident Z Neo
DRAM Manufacturer:     Samsung
DRAM Components:     K4A8G085WC-BCPB
DRAM Die Revision / Process Node:     C / 18 nm
Module Manufacturing Date:     Undefined
Module Manufacturing Location:     Taipei, Taiwan
Module Serial Number:     00000000h
Module PCB Revision:     00h
PHYSICAL & LOGICAL ATTRIBUTES
Fundamental Memory Class:     DDR4 SDRAM
Module Speed Grade:     DDR4-2133
Base Module Type:     UDIMM (133.35 mm)
Module Capacity:     8 GB
Reference Raw Card:     A1 (10 layers)
JEDEC Raw Card Designer:     SK hynix
Module Nominal Height:     31 < H <= 32 mm
Module Thickness Maximum, Front:     1 < T <= 2 mm
Module Thickness Maximum, Back:     1 < T <= 2 mm
Number of DIMM Ranks:     1
Address Mapping from Edge Connector to DRAM:     Standard
DRAM Device Package:     Standard Monolithic
DRAM Device Package Type:     78-ball FBGA
DRAM Device Die Count:     Single die
Signal Loading:     Not specified
Number of Column Addresses:     10 bits
Number of Row Addresses:     16 bits
Number of Bank Addresses:     2 bits (4 banks)
Bank Group Addressing:     2 bits (4 groups)
DRAM Device Width:     8 bits
Programmed DRAM Density:     8 Gb
Calculated DRAM Density:     8 Gb
Number of DRAM components:     8
DRAM Page Size:     1 KB
Primary Memory Bus Width:     64 bits
Memory Bus Width Extension:     0 bits
DRAM Post Package Repair:     Supported
Soft Post Package Repair:     Supported
DRAM TIMING PARAMETERS
Fine Timebase:     0.001 ns
Medium Timebase:     0.125 ns
CAS Latencies Supported:     10T, 11T, 12T, 13T,
14T, 15T, 16T
Minimum Clock Cycle Time (tCK min):     0.938 ns (1066.10 MHz)
Maximum Clock Cycle Time (tCK max):     1.600 ns (625.00 MHz)
CAS# Latency Time (tAA min):     13.750 ns
RAS# to CAS# Delay Time (tRCD min):     13.750 ns
Row Precharge Delay Time (tRP min):     13.750 ns
Active to Precharge Delay Time (tRAS min):     33.000 ns
Act to Act/Refresh Delay Time (tRC min):     46.750 ns
Normal Refresh Recovery Delay Time (tRFC1 min):     350.000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min):     260.000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min):     160.000 ns
Short Row Active to Row Active Delay (tRRD_S min):     3.700 ns
Long Row Active to Row Active Delay (tRRD_L min):     5.300 ns
Write Recovery Time (tWR min):     15.000 ns
Short Write to Read Command Delay (tWTR_S min):     2.500 ns
Long Write to Read Command Delay (tWTR_L min):     7.500 ns
Long CAS to CAS Delay Time (tCCD_L min):     5.625 ns
Four Active Windows Delay (tFAW min):     21.000 ns
Maximum Active Window (tMAW):     8192*tREFI
Maximum Activate Count (MAC):     Unlimited MAC
DRAM VDD 1.20 V operable/endurant:     Yes/Yes
Supply Voltage (VDD), Min / Typical / Max:     1.16V / 1.20V / 1.26V
Activation Supply Voltage (VPP), Min / Typical / Max:     2.41V / 2.50V / 2.75V
Termination Voltage (VTT), Min / Typical / Max:     0.565V / 0.605V / 0.640V
THERMAL PARAMETERS
Module Thermal Sensor:     Not Incorporated
INTEGRATED TEMPERATURE SENSOR
Manufacturer:     Giantec
Model:     GT34TS04
Revision:     02h
Temperature Monitor Status:     Active
Current Ambient Temperature:     32.000 °C
Sensor Resolution:     0.2500 °C (10-bit ADC)
Accuracy over the active range (75 °C to 95 °C):     ±1 °C
Accuracy over the monitoring range (40 °C to 125 °C):     ±2 °C
Open-drain Event Output:     Disabled
10V of VHV on A0 pin:     Supported
Negative Temperature Measurements:     Supported
Interrupt capabilities:     Supported
SPD PROTOCOL
SPD Revision:     1.1
SPD Bytes Total:     512
SPD Bytes Used:     384
SPD Checksum (Bytes 00h-7Dh):     242Dh (OK)
SPD Checksum (Bytes 80h-FDh):     A01Ch (OK)
PART NUMBER DETAILS
JEDEC DIMM Label:     8GB 1Rx8 PC4-2133-UA1-11
Frequency     CAS     RCD     RP     RAS     RC     RRDS     RRDL     WR     WTRS     WTRL     FAW
1067 MHz     16     15     15     36     50     4     6     16     3     8     23
1067 MHz     15     15     15     36     50     4     6     16     3     8     23
933 MHz     14     13     13     31     44     4     5     14     3     7     20
933 MHz     13     13     13     31     44     4     5     14     3     7     20
800 MHz     12     11     11     27     38     3     5     12     2     6     17
800 MHz     11     11     11     27     38     3     5     12     2     6     17
667 MHz     10     10     10     22     32     3     4     10     2     5     14
INTEL EXTREME MEMORY PROFILES
Profiles Revision: 2.0
Profile 1 (Certified) Enables: Yes
Profile 2 (Extreme) Enables: No
Profile 1 Channel Config: 2 DIMM/channel
XMP PARAMETER     PROFILE 1     PROFILE 2
Speed Grade:     DDR4-3604     N/A
DRAM Clock Frequency:     1802 MHz     N/A
Module VDD Voltage Level:     1.35 V     N/A
Minimum DRAM Cycle Time (tCK):     0.555 ns     N/A
CAS Latencies Supported:     18T     N/A
CAS Latency Time (tAA):     9.759 ns     N/A
RAS# to CAS# Delay Time (tRCD):     12.039 ns     N/A
Row Precharge Delay Time (tRP):     12.039 ns     N/A
Active to Precharge Delay Time (tRAS):     23.250 ns     N/A
Active to Active/Refresh Delay Time (tRC):     35.479 ns     N/A
Four Activate Window Delay Time (tFAW):     24.000 ns     N/A
Short Activate to Activate Delay Time (tRRD_S):     2.029 ns     N/A
Long Activate to Activate Delay Time (tRRD_L):     4.849 ns     N/A
Normal Refresh Recovery Delay Time (tRFC1):     350.000 ns     N/A
2x mode Refresh Recovery Delay Time (tRFC2):     260.000 ns     N/A
4x mode Refresh Recovery Delay Time (tRFC4):     160.000 ns     N/A
Show delays in clock cycles

x570 Taichi Trident Z Neo troubles : I have am ASRock B450M with an...

Sat, 02 Jan 2021 13:25:27 +0000