x570 Taichi Trident Z Neo troubles
Printed From: ASRock.com
Category: Technical Support
Forum Name: AMD Motherboards
Forum Description: Question about ASRock AMD motherboards
URL: https://forum.asrock.com/forum_posts.asp?TID=17713
Printed Date: 02 May 2024 at 9:43am Software Version: Web Wiz Forums 12.04 - http://www.webwizforums.com
Topic: x570 Taichi Trident Z Neo troubles
Posted By: drumshot
Subject: x570 Taichi Trident Z Neo troubles
Date Posted: 02 Jan 2021 at 1:25pm
I have am ASRock B450M with an AMD Ryzen 3 3200G that I built for my son and it keeps crashing when installing Windows 10 from USB.
I tried downgrading the BIOS from 3.70 to 3.20 but still crashing and rebooting during install.
Does anyone have any experience with resolving this issue?
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Replies:
Posted By: SoEvoL
Date Posted: 04 Jan 2021 at 11:36am
I searched around for my memory issues but I still can't figure it out. I haven't built a pc in a long time so I need some guidance as to memory overclocking. I finished this build on the 2nd since I was able to find a 3080 at Microcenter.
I tried the XMP 2.0 Profile and it won't post, it does a few cycles then powers on. I tried using Dram Calc and Thaiphoon but that didn't get me anywhere and I tried using numbers I found from other users. I probably messed something up on my end for sure. Other than the memory issue the build has been rocking and posting great numbers on 3dmark. I just want to take advantage of the 3600hz memory that I was told would work. If there's a better option I'll return it.
Thank you everyone in advance.
Hardware X570 Taichi 3.80 Ryzen 7 5800x GSkillz Trident Z Neo 3600hz Corsair rm850x
MANUFACTURING DESCRIPTION Module Manufacturer: G.Skill Module Part Number: F4-3600C18-8GTZN Module Series: Trident Z Neo DRAM Manufacturer: Samsung DRAM Components: K4A8G085WC-BCPB DRAM Die Revision / Process Node: C / 18 nm Module Manufacturing Date: Undefined Module Manufacturing Location: Taipei, Taiwan Module Serial Number: 00000000h Module PCB Revision: 00h PHYSICAL & LOGICAL ATTRIBUTES Fundamental Memory Class: DDR4 SDRAM Module Speed Grade: DDR4-2133 Base Module Type: UDIMM (133.35 mm) Module Capacity: 8 GB Reference Raw Card: A1 (10 layers) JEDEC Raw Card Designer: SK hynix Module Nominal Height: 31 < H <= 32 mm Module Thickness Maximum, Front: 1 < T <= 2 mm Module Thickness Maximum, Back: 1 < T <= 2 mm Number of DIMM Ranks: 1 Address Mapping from Edge Connector to DRAM: Standard DRAM Device Package: Standard Monolithic DRAM Device Package Type: 78-ball FBGA DRAM Device Die Count: Single die Signal Loading: Not specified Number of Column Addresses: 10 bits Number of Row Addresses: 16 bits Number of Bank Addresses: 2 bits (4 banks) Bank Group Addressing: 2 bits (4 groups) DRAM Device Width: 8 bits Programmed DRAM Density: 8 Gb Calculated DRAM Density: 8 Gb Number of DRAM components: 8 DRAM Page Size: 1 KB Primary Memory Bus Width: 64 bits Memory Bus Width Extension: 0 bits DRAM Post Package Repair: Supported Soft Post Package Repair: Supported DRAM TIMING PARAMETERS Fine Timebase: 0.001 ns Medium Timebase: 0.125 ns CAS Latencies Supported: 10T, 11T, 12T, 13T, 14T, 15T, 16T Minimum Clock Cycle Time (tCK min): 0.938 ns (1066.10 MHz) Maximum Clock Cycle Time (tCK max): 1.600 ns (625.00 MHz) CAS# Latency Time (tAA min): 13.750 ns RAS# to CAS# Delay Time (tRCD min): 13.750 ns Row Precharge Delay Time (tRP min): 13.750 ns Active to Precharge Delay Time (tRAS min): 33.000 ns Act to Act/Refresh Delay Time (tRC min): 46.750 ns Normal Refresh Recovery Delay Time (tRFC1 min): 350.000 ns 2x mode Refresh Recovery Delay Time (tRFC2 min): 260.000 ns 4x mode Refresh Recovery Delay Time (tRFC4 min): 160.000 ns Short Row Active to Row Active Delay (tRRD_S min): 3.700 ns Long Row Active to Row Active Delay (tRRD_L min): 5.300 ns Write Recovery Time (tWR min): 15.000 ns Short Write to Read Command Delay (tWTR_S min): 2.500 ns Long Write to Read Command Delay (tWTR_L min): 7.500 ns Long CAS to CAS Delay Time (tCCD_L min): 5.625 ns Four Active Windows Delay (tFAW min): 21.000 ns Maximum Active Window (tMAW): 8192*tREFI Maximum Activate Count (MAC): Unlimited MAC DRAM VDD 1.20 V operable/endurant: Yes/Yes Supply Voltage (VDD), Min / Typical / Max: 1.16V / 1.20V / 1.26V Activation Supply Voltage (VPP), Min / Typical / Max: 2.41V / 2.50V / 2.75V Termination Voltage (VTT), Min / Typical / Max: 0.565V / 0.605V / 0.640V THERMAL PARAMETERS Module Thermal Sensor: Not Incorporated INTEGRATED TEMPERATURE SENSOR Manufacturer: Giantec Model: GT34TS04 Revision: 02h Temperature Monitor Status: Active Current Ambient Temperature: 32.000 °C Sensor Resolution: 0.2500 °C (10-bit ADC) Accuracy over the active range (75 °C to 95 °C): ±1 °C Accuracy over the monitoring range (40 °C to 125 °C): ±2 °C Open-drain Event Output: Disabled 10V of VHV on A0 pin: Supported Negative Temperature Measurements: Supported Interrupt capabilities: Supported SPD PROTOCOL SPD Revision: 1.1 SPD Bytes Total: 512 SPD Bytes Used: 384 SPD Checksum (Bytes 00h-7Dh): 242Dh (OK) SPD Checksum (Bytes 80h-FDh): A01Ch (OK) PART NUMBER DETAILS JEDEC DIMM Label: 8GB 1Rx8 PC4-2133-UA1-11 Frequency CAS RCD RP RAS RC RRDS RRDL WR WTRS WTRL FAW 1067 MHz 16 15 15 36 50 4 6 16 3 8 23 1067 MHz 15 15 15 36 50 4 6 16 3 8 23 933 MHz 14 13 13 31 44 4 5 14 3 7 20 933 MHz 13 13 13 31 44 4 5 14 3 7 20 800 MHz 12 11 11 27 38 3 5 12 2 6 17 800 MHz 11 11 11 27 38 3 5 12 2 6 17 667 MHz 10 10 10 22 32 3 4 10 2 5 14 INTEL EXTREME MEMORY PROFILES Profiles Revision: 2.0 Profile 1 (Certified) Enables: Yes Profile 2 (Extreme) Enables: No Profile 1 Channel Config: 2 DIMM/channel XMP PARAMETER PROFILE 1 PROFILE 2 Speed Grade: DDR4-3604 N/A DRAM Clock Frequency: 1802 MHz N/A Module VDD Voltage Level: 1.35 V N/A Minimum DRAM Cycle Time (tCK): 0.555 ns N/A CAS Latencies Supported: 18T N/A CAS Latency Time (tAA): 9.759 ns N/A RAS# to CAS# Delay Time (tRCD): 12.039 ns N/A Row Precharge Delay Time (tRP): 12.039 ns N/A Active to Precharge Delay Time (tRAS): 23.250 ns N/A Active to Active/Refresh Delay Time (tRC): 35.479 ns N/A Four Activate Window Delay Time (tFAW): 24.000 ns N/A Short Activate to Activate Delay Time (tRRD_S): 2.029 ns N/A Long Activate to Activate Delay Time (tRRD_L): 4.849 ns N/A Normal Refresh Recovery Delay Time (tRFC1): 350.000 ns N/A 2x mode Refresh Recovery Delay Time (tRFC2): 260.000 ns N/A 4x mode Refresh Recovery Delay Time (tRFC4): 160.000 ns N/A Show delays in clock cycles
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Posted By: RLGL
Date Posted: 04 Jan 2021 at 11:11pm
Will it post without the overclock?
------------- Asrock Z370 Gaming K6,Intel i7 8700K, Asrock x570 Taichi
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Posted By: SoEvoL
Date Posted: 05 Jan 2021 at 1:18am
If I default it to auto then yes. I also tried Different speeds, I decide to just take the board and memory back and get it replaced.
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Posted By: muziqaz
Date Posted: 05 Jan 2021 at 9:02pm
drumshot wrote:
I have am ASRock B450M with an AMD Ryzen 3 3200G that I built for my son and it keeps crashing when installing Windows 10 from USB.
I tried downgrading the BIOS from 3.70 to 3.20 but still crashing and rebooting during install.
Does anyone have any experience with resolving this issue?
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More information would help. Trident Z neo is series name, and has dozen different speed SKUs. At what point is installation crashing? Do you have SATA HDD/SSD, if yes, do you have SATA mode set to AHCI instead of IDE?
------------- folding@home
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Posted By: muziqaz
Date Posted: 05 Jan 2021 at 9:04pm
SoEvoL wrote:
If I default it to auto then yes. I also tried Different speeds, I decide to just take the board and memory back and get it replaced. |
At the moment it seems memory speeds above 3533Mhz on taichi with bios 3.80 and 5000 series CPU is bugged. You are lucky you can even boot with those speeds. I can't even boot with my RAM set to 3600Mhz. It works flawlessly at 3533Mhz. Replacing board and memory will not solve anything for a moment, until Asrock and AMD get their act together and get things sorted.
Reset BIOS to factory defaults, and manually set RAM to 3533mhz, and see if it is stable.
------------- folding@home
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